Growing gallium arsenide nanowires on graphene using molecular beam epitaxy

Researchers from the Norwegian University of Science and Technology (NTNU) developed a new way to grow gallium arsenide (GaAs) nanowires on graphene using molecular beam epitaxy. The new hybrid electrode material offers excellent optoelectronic properties.

The researchers have patented the new technology and established a new company to commercialize it called CrayoNano AS. According to the company the new technology can be easily be used with existing production equipment.

Posted: Sep 11,2012 by Ron Mertens