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Graphene coating on copper wires may help prevent electromigration and help minimize future electronics

Feb 21, 2017

As electronics keep shrinking in size, several problems arise. One of these is that the copper wires that connect transistors to form complex circuits need to be very thin, but carry so much current that can cause them to break apart due to atoms being knocked out of place. One was of solving this, studied by a group led by Stanford University, is to wrap copper with graphene. The group found that this can alleviate this major problem called electromigration.

stanford team solve electromigration problem with graphene coating image

This was presented at a recent IEEE meeting that addressed the coming problems for copper interconnects and debated ways of getting around them. Growing graphene around copper wires can help prevent electromigration, and also seems to bring down the resistance of the copper wires. Generally speaking, the narrower the wire, the higher its resistance. “Interconnects have had to shrink while increasing the current densities by 20 times,” said Intel Fellow Ruth Brain at the meeting.

A novel doping method could open the door to FLG use as transparent conducting electrodes

Feb 15, 2017

Researchers from King Abdullah University of Science and Technology (KAUST), in collaboration with the Georgia Institute of Technology, have recently demonstrated a simple, solution-based, method for surface doping of few-layer graphene (FLG) using novel dopants (metal-organic molecules) that show a minimal effect on the optical transmission as compared to other dopants like metal chlorides.

This work investigates the effect of dopant strength and dosage on the electronic and electrical transport properties of doped FLG. Moreover, It reveals fundamental differences between the doping results in single layer graphene and few-layer graphene. The study focused on few-layer CVD graphene, rather than single-layer CVD graphene, a somewhat less common area of research to date.

A graphene interlayer enhanced the performance of Schottky diodes

Feb 09, 2017

A team of researchers affiliated with UNIST has designed a technique that greatly enhances the performance of Schottky Diodes (metal-semiconductor junction) used in electronic devices. The research findings are especially interesting as they address the contact resistance problem of metal-semiconductors.

Graphene interlayer improves diodes image

The researchers have created a new type of diode with a graphene insertion layer sandwiched between metal and semiconductor. They demonstrated that this graphene layer not only suppresses the material intermixing substantially, but also matches well with the theoretical prediction that "In the case of silicon semiconductors, the electrical properties of the junction surfaces hardly change regardless of the type of metal they use".

Industrial-academic collaboration develops stable and consistent graphene electronic devices

Feb 02, 2017

Researchers from Graphenea, Thales, CNRS, the University of Cambridge and GERAC have announced the development of a stable platform for manufacturing electronic devices made of graphene. Graphene field effect transistors (GFETs) made using this platform are shown to be stable against atmospheric influences and uniform in their properties across a batch of more than 500 devices.

Graphenea and cambridge develop a platform for graphene electronics production image

The researchers reported on a statistical analysis and consistency of electrical performance of GFETs on a large scale. The devices were protected and passivated with two protective layers that ensured that the conductance minimum characteristic of electrical transport in graphene is visible most of the time and that it fluctuates very little from device to device. The intrinsic charge doping was below 5x1011 cm-2. In addition, this approach removed the hysteresis effect that usually degrades graphene device performance in air. Importantly, the devices were also stable in time, with unchanged performance over the course of one month.

Grafoid unveils a cost-effective graphene coating called GrafeneX

Feb 01, 2017

Grafoid logoGrafoid, a leading graphene R&D and investment company, announced its entry into the global industrial coatings market with the introduction of its patent pending GrafeneX graphene coatings technology. Grafoid describes the GrafeneX technologies as a cost-effective way of laying down graphene coatings on large surface areas.

GrafeneX is a novel technology that creates a platform for the deposition of graphene and chemically functionalized graphene coatings. This process provides Grafoid with the capability to apply its diverse graphene-based coatings to many different types of material substrates with controllable levels of surface coverage, thickness etc. to meet precise end user requirements.