This is a sponsored post by Graphenea
Graphenea has announced that, following the release of its GFET S30, it has developed a High-K Metal Gate (HKMG) manufacturing process to create Field-Effect Transistor (FET) structures on graphene, or GFETs. This process is now available under the dedicated GFAB service, starting February 2022.
HKMG structures triggered a revolution in Si electronics when they were introduced during the early 2000’s, creating an alternative to SiO2 gate dielectrics that paved the way for further scaling. HKMG technology indeed enabled Moore’s law to continue, providing increased capacitance and lower current leakage than the previously state-of-the-art SiO2 tech. The most common FET architecture to modulate the conductance in graphene uses a SiO2 gate dielectric grown on top of a heavily doped Si substrate. Whereas this structure is easy to implement, it suffers from excessive current leakage when the SiO2 layer is thinned down, often rendering devices unusable. Moreover, the substrate acts as a global backgate, forbidding manipulation of individual GFET devices, which is essential for many applications.