Adisyn has reportedly taken a step toward solving one of the semiconductor industry’s most stubborn problems, advancing low-temperature graphene production.
Adisyn has deposited a continuous graphene layer across a 1cm by 1cm surface using an industrial Atomic Layer Deposition (ALD) system - at temperatures well below the semiconductor industry’s thermal ceiling of around 450°C. Advanced imaging and testing have confirmed that the graphene forms a continuous layer across the entire surface, a critical requirement for use in semiconductor chips.
Adisyn said the result represented a key step toward addressing one of the semiconductor industry’s “most persistent and widely recognised challenges” – the performance limitations of copper interconnects in advanced chips.
Through its wholly owned subsidiary 2D Generation, Adisyn has produced graphene using a standard industrial ALD system, rather than laboratory-scale techniques or transfer-based methods. Demonstrating graphene formation within equipment already used in fabrication environments is a necessary step toward real-world adoption. The process is based on Adisyn’s patented ALD methodology and proprietary precursor chemistry, developed specifically to enable graphene growth within semiconductor manufacturing constraints.
Adisyn will now move into what it has dubbed “recipe optimization”, which includes optimizing film quality combined with repeatability trials to confirm that the process can be consistently reproduced.
In parallel, the company will focus on scale-up from coupon-level to wafer-level substrates, alongside continued optimization of deposition parameters, material performance and productivity.
The next key milestone will be demonstrating repeatable industry-quality films, followed by wafer-scale validation and engagement with industry partners.
Once repeatable high-quality film properties are achieved at scale, Adisyn believes its tech has the potential to enable graphene to replace copper in next-generation semiconductor interconnects to unlock the next generation of advanced chip manufacturing.
