Aixtron logoAixtron AG is a provider of deposition equipment to the semiconductor industry. The company's technology solutions are used to build advanced components for electronic and opto-electronic applications based on compound, silicon, or organic semiconductor materials.

For graphene development and production, Aixtron offers the BM Pro systems (previously called Black Magic systems). BM Pro systems can be used to deposit graphene using both chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD).

Aixtron trades in the Frankfurt Stock Exchange, and in the NASDAQ Stock Exchange (AIXG).

Company Address: 
Kaiserstr. 98
D-52134 Herzogenrath
Germany

The latest Aixtron graphene news:

A novel way to produce graphene proves green and sustainable

Researchers from DTU Nanotech and collaborators at DTU Danchip, DTU Energy, Columbia University USA and Aixtron Ltd, UK have found a greener, more sustainable way of producing graphene. Their method not only reduces the amount of copper needed for growth but also reuses the copper.

The scientists minimized the amount of copper needed for growth from 50 µm thick foils to 100 nm thick layers supported by silicon wafers. To transfer the graphene, they used a novel electrochemical method in a liquid electrolyte. This method involves oxygen from the atmosphere, dissolved in a liquid electrolyte in between the copper and graphene layer. By applying a reducing potential, the oxidised copper surface is changed back to copper without dissolving it, and at the same time releasing the graphene. This works well because graphene does not tend to stick to copper oxide and reducing the copper oxide results in a volume decrease which helps further to release the graphene from the catalyst surface.

Aixtron to supply a reactor to Nano Carbon (Poland)

Aixtron logoThe leading German deposition equipment provider Aixtron announced that Nano Carbon (Poland) has ordered AIXTRON’s AIX G5 WW reactor for graphene production on silicon carbide. Nano Carbon owns a low-cost patented technique for epitaxial graphene that can be implemented on the AIXTRON system.



The equipment was ordered in the first quarter of 2015 and is due for delivery by the fourth quarter. The system will be configured to handle either ten 100mm or six 150mm substrates per run. The AIX G5 WW equipment provides high wafer throughput and is designed for the ultra-high temperatures needed for epitaxial graphene on SiC deposition.

US researchers and Aixtron engineers grew high-quality 300 mm graphene on copper-coated silicon wafers

Researchers from the University of Texas at Austin, in collaboration with Aixtron developed a new method to grow high-quality wafer-scale (300 mm) graphene sheets. This process may enable the integration of graphene with Silicon CMOS and pave the way towards graphene-based electronics.

The method is based on CVD growth on polycrystalline copper film coated silicon substrates. They report that their graphene has better charge carrier transport characteristics compared to previously synthesized poly- or single-crystalline wafers. The graphene has few defects and covers over 96% of the 300-mm wafer substrate.

King Abdullah University ordered an AIXTRON BM CVD system for graphene and CNT research

Aixtron announced today that Saudi Arabia's King Abdullah University of Science and Technology (KAUST) has ordered an AIX BM plasma-enhanced CVD system to support their graphene and carbon nanotubes research. The reactor can handle 4" substrates and Aixtron will deliver it in Q3 2014.

This is KAUST's first BM Pro system, which will be used to expand their graphene research with an aim to find a "wide range of new applications".

Shanghai University ordered an Aixtron BM R&D reactor for graphene and CNT research

Aixtron announced today that Shanghai University ordered a BM R&D reactor that will be used for graphene and CNT research at the University's Sino-Sweden Microsystem Integration Technology Center (SMIT).

The University researchers will use this new reactor for their research into CNT and graphene application using thermal- and plasma-based chemical vapor deposition (CVD). The researchers aim to develop next generation thermal interface/dissipating materials, heat spreaders, multi-chip interconnects and through silicon vias (TSV) for semiconductor chip packaging.

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