Researchers from the University of Texas at Austin have developed flexible graphene field-effect transistors (G-FET) that features record current densities and the highest power and conversion gain ever. The team says that the transistors show near symmetric electron and hole transport and are the most mechanically robust flexible graphene devices fabricated to date. They are also resistant to water.
The G-FETs were made directly atop patterned dielectrics on plastic sheets using conventional microelectronic lithography. In those devices, multi-finger metal gate electrodes are embedded in the plastic sheet. The graphene was grown using CVD.