Reseachers from University of Nebraska-Lincoln used graphene and ammonia to enhance the properties of a component that can be used in next generation RAM.

The scientists placed ammonia between graphene the ferroelectric layer to produce an enhanced ferroelectric tunnel junction that improved the reliability of RAM devices and allowed them to read data without the need to rewrite it. 

The junction contains a ferroelectric layer that is thin enough for electrons to "tunnel" through it, which is placed between two electrodes that can reverse the direction of polarization by applying an electric voltage to it. A tunnel's polarity sets its resistance to tunneling current, with one direction allowing it to flow and the other diminishing it greatly. The graphene-ammonia combination increased the distinction between these states, a welcome result for increasing reliability of RAM devices.