Paragraf has announced the successful production of its first 6-inch wafer at a newly opened manufacturing site in Huntingdon. The development marks a step forward in scaling graphene technology for commercial applications.
The wafer incorporates graphene field-effect transistors (GFETs) created using Paragraf’s proprietary process, which grows graphene directly on silicon substrates. This approach is believed to be the first demonstration of GFETs on silicon at this size using a direct-growth method, representing a major advancement for scalable graphene electronics.
Previously, Paragraf produced GFETs on 2-inch sapphire wafers using its contamination-free, transfer-free technology. Conventional methods often involve transferring graphene from a growth substrate, a process that can introduce metallic impurities. By growing graphene directly on silicon, Paragraf aims to maintain material purity and device integrity while improving compatibility with mainstream semiconductor manufacturing.
The move from 2-inch to 6-inch wafers is expected to deliver higher production throughput, improved uniformity, and closer alignment with established fabrication standards. Combined with the adoption of silicon substrates, this positions the company to accelerate development of graphene-based electronic and sensing devices.
“This first 6-inch wafer out of our Huntingdon facility is a landmark moment for Paragraf,” said Simon Thomas, Co-Founder and CEO. “It demonstrates both the maturity of our graphene growth technology and our ability to scale it on industry-relevant substrates, while maintaining the contamination-free advantages of our approach required by many applications and customers.”
The Huntingdon site forms a key part of Paragraf’s long-term strategy to transition graphene electronics from laboratory-scale innovation to commercial-scale production.
