Paragraf has announced the launch of its latest Graphene Field Effect Transistor (GFET), the PMF2000, marking a step forward in scalable graphene device manufacturing.
The PMF2000 builds on Paragraf’s existing GFET technology, retaining its hallmark contamination-free graphene while introducing production on six-inch silicon wafers. This transition is enabled by the company’s new large-wafer manufacturing facility in Huntingdon - described as the world’s first graphene foundry. The move to larger wafers improves device yield and consistency, setting a new benchmark for quality and enabling reliable high-volume production.
Designed for seamless integration, the PMF2000 remains fully compatible with existing GFET-based systems. This allows current customers to scale up production without redesigning their devices, facilitating a smooth transition to industrial-scale deployment. At the same time, the foundry infrastructure supports customizable designs tailored to specific application needs.
Paragraf says the new device is particularly suited for molecular sensing applications across sectors such as healthcare, agritech, and industrial monitoring. By combining repeatable performance with scalable manufacturing, the PMF2000 aims to accelerate the commercialization of graphene-based sensing technologies.
“The PMF2000 GFET’s graphene-on-silicon construction represents the strongest demonstration yet that Paragraf’s proprietary graphene technology has unlocked the future of increased performance semiconductor production,” said Dr. Simon Thomas, Co-Founder and CEO of Paragraf. “We look forward to seeing our customers use this device to break new ground in healthcare, agritech, chemical and industrial applications.”
The PMF2000 devices are now available through Paragraf’s online store, where customers can also access application notes detailing experimental setups and use cases for in-lab testing.
Paragraf continues to collaborate with partners at the R&D stage to develop next-generation technologies, leveraging its capability to transition innovations from early development to large-scale manufacturing using standard semiconductor processes.
