Researchers from ETRI, South Korea has recently build a flexible Memristor using thin Graphene oxide films. These new Memristors should be cheaper and easier to make as they can be roll-to-roll printed on plastic sheets.
Memristors change their resistance depending on the direction and amount of voltage applied, and they remember this resistance when the voltage is removed. The researchers use a similar design to the one used by HP (which hopes to have Memristor chips ready within 3 years), but they are swapping the titanium dioxide that HP is using with Graphene Oxide. This makes them cheap and flexible, but also much larger (1000 times in fact!). So this is not suited for high-density memory, but rather for applications such as RFID for example.