IBM develops method to use graphene to deposit materials at a specific, nanoscale location

The Industrial Technology and Science group in IBM Research-Brazil, along with other academic collaboration partners, has reportedly proven for the first time that it is possible to electrify graphene so that it deposits material at any desired location at a solid surface with an almost-perfect turnout of 97%. Using graphene in this way enables the integration of nanomaterials at wafer scale and with nanometer precision.

IBM develops method to use graphene to deposit materials at a specific, nanoscale location imageArtistic rendering of electric field-assisted placement of nanoscale materials between pairs of opposing graphene electrodes structured into a large graphene layer located on top of a solid substrate

Not only has this new work shown that it is possible to deposit material at a specific, nanoscale location, it was also reported that this can be done in parallel, at multiple deposition sites, meaning it’s possible to integrate nanomaterials at mass scale. This work has been patented.

Researchers manipulate the width of GNRs to create quantum chains that could be used for nano-transistors and quantum computing

Researchers at EMPA (Swiss Federal Laboratories for Materials Science and Technology), along with colleagues from the Max Planck Institute for Polymer Research in Mainz and other partners, have succeeded in precisely controlling the properties of graphene nano-ribbons (GNRs) by specifically varying their shape. This can be used to generate specific local quantum states, and could in the future be used for precise nano-transistors or possibly even quantum computing.

Researchers manipulate the width of GNRs to create quantum chains that could be used for nano-transistors and quantum computing image

The team has shown that if the width of a narrow graphene nano-ribbon changes, in this case from seven to nine atoms, a special zone is created at the transition: because the electronic properties of the two areas differ in a special, topological way, a "protected" and thus very robust new quantum state is created in the transition zone. This local electronic quantum state can be used as a basic component to produce tailor-made semiconductors, metals or insulators - and perhaps even as a component in quantum computers.

NIST team brings nanofluidics computing closer to reality

Computers based on fluids instead of silicon is not a new concept, and now researchers at the National Institute of Standards and Technology (NIST) have shown how computational logic operations could be performed in a liquid medium by simulating the trapping of ions (charged atoms) in graphene floating in saline solution. The scheme might also be used in applications such as water filtration, energy storage or sensor technology.

Researchers simulate simple logic for nanofluidic computing image

NIST's ion-based transistor and logic operations are simpler in concept than earlier proposals. The new simulations show that a special film immersed in liquid can act like a solid silicon-based semiconductor. For example, the material can act like a transistor, the switch that carries out digital logic operations in a computer. The film can be switched on and off by tuning voltage levels like those induced by salt concentrations in biological systems.

Graphenea launches new GFET products

Graphenea has launched sales of GFETs (graphene field effect transistors) aimed at lowering barriers to adoption of graphene, especially the sensors market. Researchers needing GFETs for their applications, whether in gas, biosensing, or other applications, can now purhcase high-quality GFET devices.

Graphenea launches GFETs imageGraphenea's new GFETs image

Graphenea has started by launching two standard GFET-for-sensing configurations called GFET-S10 and GFET-S20, each including 36 individual GFETs on a one square centimeter die, but differing in device layout. The GFET-S10 has devices distributed evenly over the die and the GFET-S20 has the devices concentrated in the center of the die with electrical pads located at the die edge. The GFET-S20 devices all have a 2-probe geometry for probing electrical properties during sensing, whereas the GFET-S10 houses 30 devices with the Hall bar geometry and 6 with 2-probe geometry. The Hall bars enable magnetic field sensing, apart from applications in graphene device research, bioelectronics, biosensing, chemical sensing, and photodetectors that the 2-probe geometry also allows.

Graphene can be tuned to behave as both an insulator and a superconductor

Researchers at MIT and Harvard University have found that graphene can be tuned to behave at two electrical extremes: as an insulator, in which electrons are completely blocked from flowing; and as a superconductor, in which electrical current can stream through without resistance.

MIT and Harvard team create graphene ''superlattice'' that can be superconductive and insulating image

Researchers in the past, including this team, have been able to synthesize graphene superconductors by placing the material in contact with other superconducting metals — an arrangement that allows graphene to inherit some superconducting behaviors. In this new work, the team found a way to make graphene superconduct on its own, demonstrating that superconductivity can be an intrinsic quality in the purely carbon-based material.

Versarien - Think you know graphene? Think again! Versarien - Think you know graphene? Think again!