Researchers at Chalmers University, affiliated with the Graphene Flagship, have devised a graphene-based spin field-effect transistor with the ability to function at room temperature. The team used the spin of electrons in graphene and similar layered material heterostructures to fabricate working devices in a step towards combining memory devices and the logic of spintronics.
The researchers demonstrated that the spin characteristics of graphene can be electrically regulated in a controlled way, even at an ambient temperature. In addition to possibly unlocking various probabilities in spin logic operations, this study also enables integration with magnetic memory elements in a device unit. If further advancements can assist in the production of a spin current without the need for charge flow, the amount of power needed will be considerably reduced, resulting in highly versatile devices.