Researchers design method to produce single-crystal graphene sheets on large-scale electrically insulating supports

Researchers from KAUST, Lanzhou University, Xiamen University, Friedrich Schiller University Jena and Ulsan have presented a method to produce single-crystal graphene sheets on large-scale electrically insulating supports. This approach could promote the development of next-generation nanomaterial-based devices, such as light and thin touchscreens, wearable electronics and solar cells.

Most graphene-based electronic devices require insulating supports. Yet, high-quality graphene films destined for industrial use are typically grown on a metal substrate, such as copper foil, before being transferred to an insulating support for device fabrication. This transfer step can introduce impurities that affect how well the device performs. Efforts to grow graphene on insulating supports have thus not been successful in producing the required high-quality single crystals.

INBRAIN Neuroelectronics signs an agreement to develop neurotechnology patented by six public research institutions

INBRAIN Neuroelectronics has signed an agreement for the exploitation and development of three patents and a trade secret, mainly held by the Institute of Microelectronics of Barcelona (IMB-CNM) of the Spanish Council for Scientific Research (CSIC), the Catalan Institute of Nanoscience and Nanotechnology (ICN2), the Institució Catalana de Recerca i Estudis Avançats (ICREA) and the Biomedical Research Centre Network CIBER BBN. The Universitat Autónoma de Barcelona (UAB) and the Institut de Investigacions Biomèdiques August Pi i Sunyer (IDIBAPS) are also co-owners of the patents. This is a successful process of technology transfer in a public-private collaboration with multiple research institutions.

The company will carry out the development and manufacturing of these technologies within the Institut Català de Nanociència i Nanotecnologia (ICN2) and the Micro and Nanofabrication Clean Room of the Institute of Microelectronics of Barcelona (IMB-CNM) of the CSIC.

Researchers create miniscule graphene-MoS2 transistors

Researchers from China's Tsinghua University and East China Normal University have created a transistor with the smallest gate length ever reported. This milestone was made possible by using graphene and molybdenum disulfide and stacking them into a staircase-like structure with two steps.

Vertical MoS2 transistors with sub-1-nm gate lengths imageThe structure of the side-wall transistor: Silicon dioxide base (dark blue), aluminum covered in aluminum oxide (brown ), the thin, light blue strip is graphene, the yellow and black strip is molybdenum disulfide, and underneath it, the hafnium dioxide.

On the higher step, there is the source, and on top of the lower step, there is the drain. Both are made of a titanium palladium alloy separated by the surface of the stairs, which is made of a single sheet of a molybdenum disulfide (MoS2), itself resting on a layer of hafnium dioxide that acts as an electrical insulator.

Researchers design a graphene-based sensor that can detect opioids in wastewater

Researchers from Boston College, Boston University, and Giner Labs have designed a small graphene-based multiplexed bio-sensor that detects opioid byproducts in wastewater.

Graphene sensor rapidly detects opioids in wastewater image

The novel device uses graphene-based field effect transistors to detect four different synthetic and natural opioids at once, while shielding them from wastewater’s harsh elements. When a specific opioid metabolite attaches to a molecular probe on the graphene, it changes the electrical charge on the graphene. These signals are easily read electronically for each probe attached to the device.