Scientists from the Moscow Institute of Physics and Technology (MIPT), the Institute of Physics and Technology RAS, and Tohoku University (Japan) have developed a new type of graphene-based transistor and using modelling they have demonstrated that it has ultralow power consumption compared with other similar transistor devices. Reducing power consumption enables the clock speed of processors to be increased, according to calculations, to as high as two orders of magnitude, since the electronic components heat up less.
Building transistors that are capable of switching at low voltages (less than 0.5 volts) is one of the major challenges of modern electronics. Tunnel transistors seem to be the most promising candidates to solve this problem. Unlike in conventional transistors, where electrons “jump” through the energy barrier, in tunnel transistors the electrons “filter” through the barrier due to the quantum tunneling effect. However, in most semiconductors the tunneling current is very small and this prevents transistors that are based on these materials from being used in real circuits.