Researchers developed a one step process to enable n- and p-type doping of large area graphene surfaces

Researchers at Georgia Tech say they have developed a one step process that enables both n- and p-type doping of large area graphene surfaces. The used commercially available spin on glass (SOG) material and applied to a sheet of graphene and then exposing it to electron beam radiation. To create both doping types you simply vary the exposure time, with higher levels of energy producing p-type areas.

Via NewElectronics