New method enables large-area trilayer graphene films with uniform thickness and improved mechanical strength
Researchers at Soochow University, University of Science and Technology of China, Peking University, ShanghaiTech University, Beijing Graphene Institute and additional collaborators have developed a copper-based growth process that produces large-area trilayer graphene films with uniform thickness and improved mechanical strength.
Schematic representation illustrating the synchronous growth process catalyzed by the heterogeneous Cu–Cu2O substrate. Inset: schematic of the graphene edge–Cu–Cu2O three-phase interfaces. Image from: Nature Communications
The team stated that much of graphene's functional promise - especially in electronics and optoelectronics - relies not on the single-layer form that dominates laboratory work, but on precise multilayer structures. Adding layers enables electronic band structures to be tuned and improves properties such as stiffness and thermal transport. Despite this, the controlled synthesis of multilayer graphene films with consistent thickness across large areas has remained quite elusive.