Researchers use graphene to develop method to reliably integrates 2D semiconductors with dielectrics
Researchers from Peking University, Beijing Graphene Institute, University of Chinese Academy of Sciences and the University of Manchester have developed a new method to integrate 2D semiconductors with dielectric materials. Their approach involves the epitaxial growth of an ultra-thin dielectric film on a graphene-covered copper surface, which subsequently enables its transfer onto various substrates with minimal defects.
The new method addresses the challenges in integrating 2D materials(like graphene) into microelectronic devices. As conventional transfer methods that use polymer supports often introduce chemical contamination, various mechanical issues and interfacial defects, the team set out to develop a wafer-scale process that overcomes these issues, by preserving graphene's intrinsic properties and ensuring a clean, well-controlled interface during transfer and encapsulation.