Researchers manage to make Graphene in a simple way using a cubic 3C-SiC substrate

A European team has developed a new way to Graphene, on the cheap. The team has grown high-quality graphene on the surface of commercially available silicon carbide wafers to produce material with excellent electronic properties. It had been thought that the substrate they used, cubic 3C-SiC, or β-SiC (which is widely grown commercially), wouldn't be suitable because of its cubic lattice structure. But they say that the interaction with the substrate is almost negligible, rendering this system a perfect candidate for future graphene-based electronics.