Chinese team created graphene aerogels inspired by plant structure

Jun 22, 2017

Researchers at Zhejiang University in China have designed a graphene-based aerogel mimicking the structure of the "powdery alligator-flag" plant that could have potential for use in applications like flexible electronics.

Graphene aerogel based on plant structure image

The team drew inspiration from the stem structure of the powdery alligator-flag plant (Thalia dealbata), a strong, lean plant capable of withstanding harsh winds. The researchers used a bidirectional freezing technique that they previously developed to assemble a new type of biomimetic graphene aerogel that had an architecture like that of the plant's stem. When tested, the material supported 6,000 times its own weight and maintained its strength after intensive compression trials and was resilient. They also put the aerogel in a circuit with a LED and found it could potentially work as a component of a flexible device.

Graphene electrodes may open new paths in molecular electronic devices

Jun 12, 2017

An international team of researchers, led by the University of Bern and the National Physical Laboratory (NPL) and assisted by the University of the Basque Country (UPV/EHU, Spain) and Chuo University (Japan), has demonstrated a new way to control the functionality of next-gen molecular electronic devices using graphene. The results could be used to develop smaller, higher-performance devices for use in a applications like sensors, flexible electronics, energy conversion and storage, and more.

The team demonstrated the stability of multi-layer graphene-based molecular electronic devices down to the single molecule limit. The findings represent a major step change in the development of graphene-based molecular electronics, with the reproducible properties of covalent contacts between molecules and graphene (even at room temperature) reportedly overcoming the limitations of current state-of-the-art technologies based on coinage metals.

High performance graphene transistors developed by Graphene Flagship researchers

Jun 07, 2017

An international team of scientists collaborating in the Graphene Flagship project has developed a graphene-based transistor that reportedly outperforms previous state-of-the-art ones. The team utilized a thin top gate insulator material to optimize operational properties like maximum oscillation frequency, cutoff frequency, forward transmission coefficient, and open-circuit voltage gain, realizing devices that show prospect of using graphene in a wide range of electronic applications.

Graphene Flagship team develops high performance graphene transistors image

Graphene lack of a bandgap hinders its use in electronics since it causes an inability to switch the transistors off, effectively rendering the “0” state in digital logic inaccessible. However, many analog applications do not require a bandgap; The team explains that the only undesired side-effect of using GFETs in analog circuits is a poor saturation of the drain current, which prevents high-gain operation. The researchers have now succeeded in improving saturation by optimizing the dielectric material (AlOx) that is used to electrically insulate the top gate of the GFET. An improved quality of gate dielectric resulted in strong control over carriers in the graphene channel, yielding overall performance benefits.

Graphene and hBN used to develop a 2D RRAM memory device

Jun 01, 2017

Researchers from Soochow University in China developed a 2D RRAM device structure based on sheets of graphene and hexagonal boron nitride (hBN). The device uses a Graphene/hBN/Graphene structure and it features excellent overall fitting results.

2D Graphene / hBN RRAM design

This is still just a theoretical model, but it may prove to be the basis of high performance RRAM devices.

Manipulating the electron spin can lower the contact resistance in graphene-metal interfaces

May 22, 2017

NUS researchers discovered that manipulating the electron spin lowers the contact resistance in graphene-metal interfaces, which normally suffer from large electrical resistance.

Spin filtering in metal-graphene interfaces image

The researchers have shown that edga-contacted device geometries in metallic-graphene interfaces feature some of the lowest contact resistances reported to date - significantly lower than in surface-contracted interfaces. The researchers explain that this is due to the different behavior of electron spins in these geometries.

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