Graphene-based sliding ferroelectric transistor stores 3,024 stable polarization states
Researchers from Nanjing University of Aeronautics and Astronautics have demonstrated an atom‑thin sliding ferroelectric transistor that can reliably store 3,024 distinct, non‑volatile polarization states at room temperature - a record for ferroelectric neuromorphic hardware. The device is built from a well‑aligned monolayer graphene channel on hexagonal boron nitride (hBN), forming a moiré superlattice that enables fine, electrical control over ferroelectric polarization and charge localization within just a few atomic layers.
Performance comparison of Gr/hBN device and schematic diagram of its working mechanism. Credit: Nature Electronics (2026)
The transistor consists of an aligned graphene monolayer atop ferroelectric hBN, with source, drain and gate electrodes defined by standard nanofabrication, including electron‑beam evaporation for the metal contacts. Graphene serves as a high‑mobility, atomically thin channel whose Fermi level can be tuned electrostatically, while the underlying hBN provides sliding‑induced ferroelectricity and an atomically flat, low‑disorder interface. The lattice mismatch of about 1.8% between graphene and hBN generates a long‑wavelength moiré potential, which plays a central role in localizing injected carriers and stabilizing multiple polarization configurations.
