Fujitsu Laboratories announced that they have developed new technology for forming Graphene transistors directly on the surface of large-scale insulating substrates at low temperatures while employing chemical-vapor deposition techniques which are in widespread use in semiconductor manufacturing.
Compared to the temperatures of 800-1000 degree C at which graphene is formed with conventional methods, Fujitsu has succeeded in significantly lowering the graphene fabrication-temperature to 650 degree C thus allowing for graphene transistors to be formed directly on a variety of insulator substrates, including substrates that are sensitive to the higher temperatures.
Posted: Nov 28,2009 by Ron Mertens
