Researchers from the Nano-Device Laboratory research at the University of California - Riverside (UCR) and a laboratory at Rensselaer Polytechnic Institute (RPI) says low-frequency noise in a double-gate graphene transistors is low...

The team has designed and built single-layer graphene transistors with two gates: the back gate made of degenerately doped silicon wafer and the metallic top gate separated from the graphene device channel by HfO2 (a material recently introduced by semiconductor industry for conventional silicon transistors).

The fact that graphene is just a single atomic layer of material, where surface dominates its properties, suggests that the noise level can be extremely high. In this regard, the UCR–RPI discovery that the noise is rather low, and in properly designed and fabricated graphene transistors can be reduced down to the same levels as in conventional semiconductor devices, comes as a bit of surprise.

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