Researchers from the Sejong University in South Korea developed a graphite patterning method based on scanning probe lithography (SPL) - performed in a controlled gas environment. SPL is usually done in air, but this prohibits uniform patterning. The new method could enable better graphite or graphene patterning.
The team reports that methyl alcohol (MA) facilitates graphite etching and gives a line width as narrow as 3 nm. Due to its low surface tension and highly adsorptive behavior, MA provides advantages for narrow line width and high speed etching operation.
Posted: Sep 08,2011 by Ron Mertens