Chinese team uses graphene to develop world's fastest Flash memory device
Researchers from Fudan University in China have used graphene to create the world’s fastest flash memory, which performs about 25 billion operations per second.
The device, called "PoX", takes 400 picoseconds (0.0000000004 sec) to store one bit of information. Usually, traditional static and dynamic RAM (SRAM, DRAM) records data at a speed of 1 to 10 nanoseconds, but does not retain information in the event of a sudden power outage. Flash drives don’t need a power source to store data, but they take micro and milliseconds to store, which is too slow for modern artificial intelligence accelerators that send terabytes of data in real time.