Researchers from Soochow University in China developed a 2D RRAM device structure based on sheets of graphene and hexagonal boron nitride (hBN). The device uses a Graphene/hBN/Graphene structure and it features excellent overall fitting results.
This is still just a theoretical model, but it may prove to be the basis of high performance RRAM devices.
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Posted: Jun 01,2017 by Ron Mertens
