Researchers from Soochow University in China developed a 2D RRAM device structure based on sheets of graphene and hexagonal boron nitride (hBN). The device uses a Graphene/hBN/Graphene structure and it features excellent overall fitting results.

2D Graphene / hBN RRAM design

This is still just a theoretical model, but it may prove to be the basis of high performance RRAM devices.

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