Researchers from Korea's Ulsan National Institute of Science and Technology (UNITS) developed new graphene-based FETs (G-FETs), based on boron/nitrogen co-doped graphene nanoplatelets.

The researchers major breakthrough is the development of a new efficient method to produce those BCN-graphene platelets via a simple solvothermal reaction using potassium. Doping the GNPs opens up a bandgap.

The researchers actually aimed to dope the GNPs with boron, and the nitrogen was introduced only to help the boron doping, but they found out that pairing boron and nitrogen atoms enables an easy doping method.

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